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參數(shù)資料
| 型號(hào)： | AP9976GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 60 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 219K |
| 代理商： | AP9976GM |
2001 Oct 01
2
Philips Semiconductors
Product specication
High-voltage car ignition diode
BYX132GPL
FEATURES
Plastic package
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability.
APPLICATIONS
Car ignition systems
Automotive applications with extreme temperature
requirements.
DESCRIPTION
Plastic package, using glass passivation and a high
temperature alloyed construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
k
a
MBL155
Fig.1 Simplified outline (SOD125A) and symbol.
Cathode indicated by a red band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
2kV
VRWM
crest working reverse voltage
2kV
IF(AV)
average forward current
50
mA
IFRM
repetitive peak forward current
500
mA
IRSM
non-repetitive peak reverse current
t = 100
s triangular pulse;
Tj(max) prior to surge
50
mA
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
continuous
175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 10 mA
2.50
3.50
V
V(BR)R
reverse avalanche breakdown voltage
IR = 100 A
2.6
3.7
kV
IR
reverse current
VR =VRWMmax; Tj = 175 °C
30
A
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient Tamb =Tleads; lead length = 10 mm
90
K/W
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| AP9977AGH | 9 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9976GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9977AGH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9977AGM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9977GH-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9977GJ-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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