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參數(shù)資料
| 型號(hào)： | AP9977AGH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 129K |
| 代理商： | AP9977AGH |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
60
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5A
-
100
mΩ
VGS=4.5V, ID=4A
-
165
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=60V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=48V ,VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=5A
-
7
12
nC
Qgs
Gate-Source Charge
VDS=48V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
2.4
-
nC
td(on)
Turn-on Delay Time
2
VDS=30V
-
4
-
ns
tr
Rise Time
ID=5A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
12
-
ns
tf
Fall Time
RD=6Ω
-
2.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
210
340
pF
Coss
Output Capacitance
VDS=25V
-
35
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=10A, VGS=0V
-
1.3
V
t
rr
Reverse Recovery Time
2
IS=5A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP9977AGH
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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相關(guān)代理商/技術(shù)參數(shù) |
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| AP9977AGM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9978AGP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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