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參數(shù)資料
| 型號(hào)： | APM2023NUC-TRG |
| 廠商： | ANPEC ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 20 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 126K |
| 代理商： | APM2023NUC-TRG |
Copyright
ANPEC Electronics Corp.
Rev. B.3 - Mar., 2008
2
APM2023NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±12
V
TJ
Maximum Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 to 150
°C
IS
Diode Continuous Forward Current
TC=25°C
2
A
Mounted on Large Heat Sink
TC=25°C
100
IDP
300
μs Pulse Drain Current Tested
TC=100°C
75
A
TC=25°C
30*
ID
Continuous Drain Current
TC=100°C
20
A
TC=25°C
50
PD
Maximum Power Dissipation
TC=100°C
20
W
RθJC
Thermal Resistance-Junction to Case
2.5
°C/W
Mounted on PCB of 1in
2 Pad Area
TA=25°C
100
IDP
300
μs Pulse Drain Current Tested
TA=100°C
75
A
TA=25°C
9
ID
Continuous Drain Current
TA=100°C
6
A
TA=25°C
2.5
PD
Maximum Power Dissipation
TA=100°C
1
W
RθJA
Thermal Resistance-Junction to Ambient
50
°C/W
Mounted on PCB of Minimum Footprint
TA=25°C
100
IDP
300
μs Pulse Drain Current Tested
TA=100°C
75
A
TA=25°C
7
ID
Continuous Drain Current
TA=100°C
5
A
TA=25°C
1.6
PD
Maximum Power Dissipation
TA=100°C
0.6
W
RθJA
Thermal Resistance-Junction to Ambient
75
°C/W
Note:
* Current limited by bond wire.
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