參數(shù)資料
型號: APM2506NU
廠商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N溝道增強型MOS管
文件頁數(shù): 7/11頁
文件大?。?/td> 183K
代理商: APM2506NU
CopyrightANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
5
www.anpec.com.tw
APM2506NU
Typical Characteristics
I D
-D
rai
n
C
urr
en
t
(A
)
Output Characteristics
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
I D
-D
rai
n
C
u
rr
en
t(A
)
Transfer Characteristics
VGS - Gate-Source Voltage (V)
Gate Threshold Voltage
Tj - Junction Temperature (°C)
N
o
rm
ali
ze
d
Th
re
sh
o
ld
V
o
ltag
e
ID - Drain Current (A)
R
DS(ON)
-O
n
R
esi
stan
ce
(
m
)
0
2040
6080
100
0
2
4
6
8
10
12
V
GS
=4.5V
V
GS
=10V
02
4
6
8
10
0
20
40
60
80
100
3V
2V
2.5V
V
GS
=3.5,4,5,6,7,8,9,10V
-50
-25
0
25
50
75
100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
DS
=250A
0
1
2
345
0
20
40
60
80
100
T
j
=-55
oC
T
j
=125
oC
T
j
=25
oC
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