參數(shù)資料
型號: APM2506NU
廠商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N溝道增強型MOS管
文件頁數(shù): 8/11頁
文件大小: 183K
代理商: APM2506NU
CopyrightANPEC Electronics Corp.
Rev. B.1 - Oct., 2003
6
www.anpec.com.tw
APM2506NU
Typical Characteristics
Normalized
On
Res
istan
c
e
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
C
-
Capacitance
(nC)
Capacitance
VDS - Drain-Source Voltage (V)
Gate Charge
QG - Gate Charge (nC)
V
GS
-Ga
te-
S
ourc
eVoltag
e
(V
)
I S
-Sour
ce
Curr
ent
(A
)
Source-Drain Diode Forward
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
T
j
=150
oC
T
j
=25
oC
-50
-25
0
25
50
75
100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
R
ON
@T
j
=25
oC: 5m
V
GS
= 10V
I
DS
= 40A
0
10
2030
4050
6070
0
1
2
3
4
5
6
7
8
9
10
V
DS
=10 V
I
D
= 30 A
0
5
10
15
20
25
0
1000
2000
3000
4000
5000
6000
Frequency=1MHz
Crss
Coss
Ciss
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