參數(shù)資料
型號: APT10035B2FLLG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TMAX-3
文件頁數(shù): 3/3頁
文件大?。?/td> 181K
代理商: APT10035B2FLLG
Agere Systems Inc.
5
Preliminary Data Sheet
AGR09030E
November 2004
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C.
IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8—13. OFFSET 1 = 750 kHz, 30 kHz BW. OFFSET 2 = 1.98 MHz, 30 kHz BW.
Figure 4. ACPR vs. POUT
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C, WAVEFORM = CW.
Figure 5. Power Gain and Return Loss vs. Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
5
10
15
20
POUT (W)X
ACPR
(dBc)
X
ACP+
ACP-
ACP1+
ACP1-
FREQUENCY = 880 MHz
10
11
12
13
14
15
16
17
18
19
20
21
22
23
860
865
870
875
880
885
890
895
900
FREQUENCY (MHz)X
POWER
GAIN
(dB)
X
-18.0
-16.0
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
INPUT
RET
URN
LOSS
(dB)
X
POWER GAIN
POUT = 5 W
POUT = 40 W
RETURN LOSS
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