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參數(shù)資料
| 型號(hào)： | APT10M11JVRU2 |
| 元件分類： | JFETs |
| 英文描述： | 142 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 730K |
| 代理商： | APT10M11JVRU2 |
APT10M11JVRU2
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2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
100
V
VGS = 0V,VDS = 100V
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 71A
11
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
8600
Coss
Output Capacitance
3200
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
1180
pF
Qg
Total gate Charge
300
Qgs
Gate – Source Charge
95
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID = 50A @ TJ=25°C
110
nC
Td(on)
Turn-on Delay Time
16
Tr
Rise Time
48
Td(off)
Turn-off Delay Time
51
Tf
Fall Time
VGS = 15V
VBus = 50V
ID = 142A @ TJ=25°C
RG = 0.6
9
ns
Diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
1.1
1.15
IF = 60A
1.4
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
0.9
V
VR = 200V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 200V
Tj = 125°C
500
A
CT
Junction Capacitance
VR = 200V
94
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =200A/s
Tj = 25°C
21
Tj = 25°C
24
trr
Reverse Recovery Time
Tj = 125°C
48
ns
Tj = 25°C
3
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
6
A
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt =200A/s
Tj = 125°C
150
nC
trr
Reverse Recovery Time
31
ns
Qrr
Reverse Recovery Charge
335
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 133V
di/dt =1000A/s
Tj = 125°C
19
A
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