參數(shù)資料
型號(hào): APT10M11JVRU2
元件分類: JFETs
英文描述: 142 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數(shù): 3/7頁
文件大?。?/td> 730K
代理商: APT10M11JVRU2
APT10M11JVRU2
A
P
T
10M
11J
V
R
U
2–
R
ev
0
O
ct
obe
r,
2004
APT website – http://www.advancedpower.com
3 – 7
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
MOSFET
0.28
RthJC
Junction to Case
Diode
1.21
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG Storage Temperature Range
-55
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
Typical MOSFET Performance Curve
相關(guān)PDF資料
PDF描述
APT12067B2LL 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET
APT12067LLL 18 A, 1200 V, 0.67 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT15GP60BDL 56 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT20M11JVR 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20N60CC3 14 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT10M11JVRU3 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:*
APT10M11LVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:High Voltage N-Channel enhancement mode power MOSFET
APT10M11LVFRG 功能描述:MOSFET N-CH 100V 100A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT10M11LVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
APT10M13JNR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 150A I(D)