參數資料
型號： APT200GN60JDQ4
元件分類： IGBT 晶體管
英文描述： 283 A, 600 V, N-CHANNEL IGBT
封裝： ISOTOP-4 PIN
文件頁數： 2/9頁
文件大?。?/td> 524K
代理商： APT200GN60JDQ4
050-7611
Rev
B
3-2005
APT200GN60JDQ4
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
Volts
oz
gm
Ibin
Nm
MIN
TYP
MAX
.22
.33
2500
1.03
29.2
10
1.1
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
RMS Voltage (50-60Hz Sinusoidal Wavefom from Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Terminal & Mounting Torque
Symbol
RθJC
V
Isolation
W
T
Torque
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
SCSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 300V
I
C = 100A
T
J = 175°C, RG = 1.0
7
, V
GE =
15V, L = 100H, V
CE = 600V
VCC = 360V, VGE = 15V,
T
J = 150°C, RG = 1.0
7
Inductive Switching (25°C)
V
CC = 400V
V
GE = 15V
I
C = 200A
R
G = 1.0
7
T
J = +25°C
Inductive Switching (125°C)
V
CC =400V
V
GE = 15V
I
C = 200A
R
G = 1.0
7
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
MIN
TYP
MAX
14100
4610
4000
8.2
1180
85
660
600
5
50
80
560
100
13
15
11
50
80
620
70
14
16
10
UNIT
pF
V
nC
A
s
ns
mJ
ns
mJ
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specications and information contained herein.
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相關代理商/技術參數
參數描述
APT200GN60JDQ4G 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B
APT200GN60JG 功能描述:IGBT 600V 283A 682W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B
APT200GT60JR 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING - Rail/Tube
APT200GT60JRDL 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube
APT200GT60JRDQ4 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY COMBI - Rail/Tube
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