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參數(shù)資料
| 型號： | APT20GF120SRDQ1 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 36 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 464K |
| 代理商： | APT20GF120SRDQ1 |
052-6279
Rev
A
10-2005
APT20GF120B_SRDQ1(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 127°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 15A
Forward Voltage
I
F = 30A
I
F = 15A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.8
2.4
2.45
APT20GF120B_SRDQ1(G)
15
29
110
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
21
-
240
-
260
-
3
-
290
-
960
-
6
-
130
-
1340
-
19
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 15A, diF/dt = -200A/s
V
R = 800V, TC = 25°C
I
F = 15A, diF/dt = -200A/s
V
R = 800V, TC = 125°C
I
F = 15A, diF/dt = -1000A/s
V
R = 800V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.676
0.504
0.00147
0.0440
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
D = 0.9
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| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
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| APT20GF120SRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
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| APT20GN60BDQ1G | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT20GN60BG | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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