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參數(shù)資料
| 型號： | APT20GF120SRDQ1 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 36 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大小： | 464K |
| 代理商： | APT20GF120SRDQ1 |
052-6279
Rev
A
10-2005
APT20GF120B_SRDQ1(G)
TYPICAL PERFORMANCE CURVES
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
C
ol
le
ct
or
(C
at
ho
de
)
Collector (Cathode)
Emitter (Anode)
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads (Cathode)
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
D
ra
in
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector (Cathode)
Emitter (Anode)
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
e3 SAC: Tin, Silver, Copper
D3 PAK Package Outline
4
3
1
2
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
APT10078BLL
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PDF描述 |
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| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60BDQ1G | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60BDQ1 | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60BDQ1 | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GF120SRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GN60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GN60BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT20GN60BDQ1G | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT20GN60BG | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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