參數(shù)資料
型號： APT20M22JVRU3
元件分類： JFETs
英文描述： 97 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOTOP-4
文件頁數(shù)： 1/7頁
文件大?。?/td> 720K
代理商： APT20M22JVRU3
APT20M22JVRU3
A
P
T
20M
22J
V
R
U
3–
R
ev
0
O
ct
obe
r,
2004
APT website – http://www.advancedpower.com
1 – 7
ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
A
S
G
D
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
97
ID
Continuous Drain Current
Tc = 80°C
72
IDM
Pulsed Drain current
388
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
22
m
PD
Maximum Power Dissipation
Tc = 25°C
450
W
IAR
Avalanche current (repetitive and non repetitive)
97
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
IFAV
Maximum Average Forward Current
Duty cycle=0.5
Tc = 90°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
47
A
VDSS = 200V
RDSon = 22m max @ Tj = 25°C
ID = 97A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
ISOTOP Buck chopper
MOSFET Power Module
A
D
G
S
相關(guān)PDF資料
PDF描述
APT20M22LVR 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT20M22LVR 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT20M34SLL 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M34BLLG 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT20M34BLL 74 A, 200 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT20M22LVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M22LVFRG 功能描述:MOSFET N-CH 200V 100A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT20M22LVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M22LVRG 功能描述:MOSFET N-CH 200V 100A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT20M25JNR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 100A I(D)
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