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參數(shù)資料
| 型號： | APT26GU30SAG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 47 A, 300 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263, D2PAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 172K |
| 代理商： | APT26GU30SAG |
050-7466
Rev
B
4-2004
APT26GU30K_SA
TYPICAL PERFORMANCE CURVES
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE = 15V)
FIGURE 2, Output Characteristics (V
GE = 10V)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE, GATE-TO-EMITTER VOLTAGE (V)
T
J, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
,COLLECTOR
CURRENT
(A)
01
2
3
4
0
1
2
34
0
2
4
6
8
10
0
5
10152025303540
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
TJ = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
TC=-55°C
TC=125°C
TC=25°C
VCE = 240V
VCE = 150V
VCE = 60V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 13A
TJ = 25°C
TJ = -55°C
TJ = 125°C
TC = -55°C
TC = 25°C
TC = 125°C
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 6.5A
IC = 13A
IC = 26A
IC = 13A
IC = 6.5A
60
50
40
30
20
10
0
100
80
60
40
20
0
3
2.5
2
1.5
1
0.5
0
1.10
1.05
1.00
0.95
0.90
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0
70
60
50
40
30
20
10
0
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