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參數(shù)資料
| 型號： | APT30GF60BN |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 30A I(C) | TO-247 |
| 中文描述： | 晶體管| IGBT的|正陳| 600V的五（巴西）國際消費電子展| 30A條一（c）|至247 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 53K |
| 代理商： | APT30GF60BN |
APT30D120BCT
1200V
30A
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 80°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Operating and StorageTemperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
T
J
,T
STG
T
L
Symbol
V
F
I
RM
C
T
L
S
Characteristic / Test Conditions
I
F
= 30A
Maximum Forward Voltage
I
F
= 60A
I
F
= 30A, T
J
= 150°C
Maximum Reverse Leakage Current
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125°C
Junction Capacitance, V
R
= 200V
Series Inductance (Lead to Lead 5mm from Base)
STATIC ELECTRICAL CHARACTERISTICS
PRODUCT BENEFITS
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
UNIT
Volts
Amps
°C
UNIT
Volts
μA
pF
nH
MIN
TYP
MAX
2.5
2.0
2.0
250
500
30
10
APT30D120BCT
1200
30
70
210
-55 to 150
300
MAXIMUM RATINGS
All Ratings Are Per Diode: T
C
= 25°C unless otherwise specified.
PRODUCT FEATURES
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular TO-247 Package
Low Forward Voltage
High Blocking Voltage
Low Leakage Current
PRODUCT APPLICATIONS
Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
0
APT Website - http://www.advancedpower.com
1
3
2
1- Anode 1
2- Common Cathode
Back of Case-Cathode
3- Anode 2
TO247
1
2
3
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相關代理商/技術參數(shù) |
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|---|---|
| APT30GF60JCU2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP? Boost chopper NPT IGBT SiC chopper diode |
| APT30GF60JU2 | 功能描述:IGBT 600V 58A 192W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT30GF60JU3 | 功能描述:IGBT 600V 58A 192W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT30GL100BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 30A I(C) | TO-247 |
| APT30GN60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
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