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參數(shù)資料
| 型號： | APT30M90AVR |
| 元件分類： | JFETs |
| 英文描述： | 33 A, 300 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | APT30M90AVR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
30
60
90
120
150
0
1
2
3
4
5
0
2468
0
25
50
75
100
125
150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT30M90AVR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
60
50
40
30
20
10
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1.20
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
60
50
40
30
20
10
0
60
50
40
30
20
10
0
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
050-5822
Rev
B
9-2001
VGS=10V
VGS=20V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=6V, 7V, 10V & 15V
5.5V
4.5V
5V
4V
5.5V
4.5V
5V
4V
VGS=15V
6V
VGS=10V
VGS=7V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| APT30N60BC6 | 功能描述:MOSFET N-CH 600V 30A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT30N60KC6 | 功能描述:MOSFET N-CH 600V 30A TO-220 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT30N60SC6 | 制造商:Microsemi Corporation 功能描述:APT30N60SC6 - Bulk |
| APT30S20B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
| APT30S20BCT | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:HIGH VOLTAGE SCHOTTKY DIODE |
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