參數(shù)資料
型號(hào): APT31N60SCS
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁數(shù): 5/5頁
文件大?。?/td> 276K
代理商: APT31N60SCS
050-7238
Rev
A
1-2007
Typical Performance Curves
APT31N60B_SCS(G)
Scope pics are placed with the place command
and then scaled to 50%
Figure 19, Turn-off Switching Waveforms and Denitions
Figure 18, Turn-on Switching Waveforms and Denitions
Drain Current
Drain Voltage
Gate Voltage
T
J125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
APT15DQ60
ID
VDS
D.U.T.
VDD
G
Figure 20, Inductive Switching Test Circuit
T
J125°C
10%
0
t
d(off)
t
f
Switching Energy
90%
Drain Voltage
Gate Voltage
Drain Current
Switching Energy
TO-247 Package Outline
D
3PAK Package Outline
e3
e1 SAC: Tin, Silver, Copper
100% Sn
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
D
ra
in
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
D
ra
in
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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