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參數(shù)資料
| 型號(hào)： | APT33GF120LRDQ2G |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 64 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 454K |
| 代理商： | APT33GF120LRDQ2G |
052-6280
Rev
A
11-2005
APT33GF120B2_LRDQ2(G)
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specications and information contained herein.
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
MIN
TYP
MAX
.35
0.61
6.10
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
RθJC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 600V
I
C = 25A
T
J = 150°C, RG = 4.3, VGE =
15V, L = 100H,V
CE = 1200V
Inductive Switching (25°C)
V
CC = 800V
V
GE = 15V
I
C = 25A
R
G = 4.3
T
J = +25°C
Inductive Switching (125°C)
V
CC = 800V
V
GE = 15V
I
C = 25A
R
G = 4.3
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 6
MIN
TYP
MAX
1855
230
110
10
170
19
100
75
14
17
185
110
1315
1930
1515
14
17
220
135
1325
3325
2145
UNIT
pF
V
nC
A
ns
J
ns
J
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