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參數(shù)資料
| 型號： | APT38N60BC6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 38 A, 600 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 147K |
| 代理商： | APT38N60BC6 |
050-7207
Rev
A
6-2010
Typical Performance Curves
APT38N60B_SC6
0
500
1000
1500
2000
2500
0
10
20
30
40
50
60
0
20
40
60
80
00
10
20
30
40
50
60
1
10
100
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
20
40
60
80
100
120
140
160
180
10
20
30
40
50
60
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
140
1
10
100
1000
10,000
100,000
0
100
200
300
400
500
C
iss
T
J = =25°C
V
DS= 480V
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
C,
CAP
ACIT
ANCE
(pF)
V
DS= 300V
Q
g, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
V
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
I
D (A)
FIGURE 13, Delay Times vs Current
t d(on)
and
t
d(of
f)
(ns)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
I DR
,REVERSE
DRAIN
CURRENT
(A)
I
D (A)
FIGURE 14 , Rise and Fall Times vs Current
t r,
and
t
f
(ns)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
SWITCHING
ENERGY
(uJ)
0
400
800
1200
1600
2000
0
10
20
30
40
50
60
I
D (A)
FIGURE 15, Switching Energy vs Current
SWITCHING
ENERGY
(
μ
J)
C
oss
C
rss
T
J= +150°C
I
D = 38A
V
DD = 400V
R
G = 4.3 Ω
T
J = 125°C
L = 100μH
t
d(on)
t
d(off)
V
DD = 400V
R
G = 4.3Ω
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
E
on
E
off
V
DD = 400V
R
G = 4.3Ω
T
J = 125°C
L = 100μH
t
r
t
f
E
on
E
off
V
DD = 400V
I
D = 38A
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
V
DS= 120V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT38N60SC6 | 38 A, 600 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT4012BVR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT4012SVFR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT4012BVFR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT4012BVFR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT38N60SC6 | 制造商:Microsemi Corporation 功能描述:APT38N60SC6 - Bulk |
| APT39F60J | 功能描述:MOSFET N-CH 600V 42A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 8™ 標準包裝:10 系列:* |
| APT39M60J | 功能描述:MOSFET N-CH 600V 42A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 8™ 標準包裝:10 系列:* |
| APT39M60J_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT400 | 制造商:Carlo Gavazzi 功能描述:TERMINAL COVER FOR TOR 制造商:Altech Corporation 功能描述: |
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