參數資料
型號： APT40GF120JRD
廠商： Advanced Power Technology Ltd.
英文描述： The Fast IGBT⑩ is a new generation of high voltage power IGBTs
中文描述： ⑩的快速IGBT是一種高壓IGBT的新一代
文件頁數： 1/4頁
文件大?。?/td> 51K
代理商： APT40GF120JRD
G
C
E
0
APT40GF120JRD
1200V
60A
The Fast IGBT
is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
Low Forward Voltage Drop
Low Tail Current
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
High Freq. Switching to 20KHz
Ultra Low Leakage Current
Fast IGBT
& FRED
SOT-227
G
E
E
C
ISOTOP
"UL Recognized"
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700
μ
A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 125
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
°
C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125
°
C)
2
Gate-Emitter Leakage Current (V
GE
=
±
20V, V
CE
= 0V)
PRELMNARY
APT40GF120JRD
1200
1200
±
20
60
40
120
80
390
-55 to 150
300
MAXIMUM RATINGS (IGBT)
All Ratings: T
C
= 25
°
C unless otherwise specified.
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.9
3.5
3.4
4.1
0.8
TBD
±
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.8mA)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
°
C
Continuous Collector Current @ T
C
= 90
°
C
Pulsed Collector Current
1
@ T
C
= 25
°
C
Pulsed Collector Current
1
@ T
C
= 90
°
C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
Watts
°
C
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 9215 15
FAX: (33) 5 56 4797 61
APT Website - http://www.advancedpower.com
相關PDF資料
PDF描述
APT50GF120B2R The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF120JRD The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GF120LR Thin Film RF/Microwave Capacitor; Capacitance:2.7pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT50GF60B2RD The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
APT50GF60BR Thin Film RF/Microwave Capacitor; Capacitance:3.3pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
相關代理商/技術參數
參數描述
APT40GF120JRDQ2 功能描述:IGBT 1200V 77A 347W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B
APT40GL120JU2 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227
APT40GL120JU3 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227
APT40GLQ120JCU2 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APT40GP60B 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT
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