參數(shù)資料
型號(hào)： APT40GF120JRD
廠商： Advanced Power Technology Ltd.
英文描述： The Fast IGBT⑩ is a new generation of high voltage power IGBTs
中文描述： ⑩的快速I(mǎi)GBT是一種高壓IGBT的新一代
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 51K
代理商： APT40GF120JRD
0
APT40GF120JRD
PRELMNARY
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 60
°
C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
°
C, 8.3mS)
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 60A
Maximum Forward Voltage
I
F
= 120A
I
F
= 60A, T
J
= 150
°
C
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
Amps
UNIT
Volts
MIN
TYP
MAX
2.5
2.0
2.0
APT40GF120JRD
1200
60
100
540
MAXIMUM RATINGS (FRED)
All Ratings: T
C
= 25
°
C unless otherwise specified.
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MIN
TYP
MAX
70
85
70
130
170
170
18
30
29
40
630
1820
12
12
900
600
UNIT
ns
Amps
nC
Volts
A/
μ
s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt
= -15A/
μ
s, V
R
= 30V,
T
J
= 25
°
C
Reverse Recovery Time
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 100
°
C
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 650V
Forward Recovery Time
I
F
= 60A, di
F
/dt
= 480A/
μ
s, V
R
= 650V
Reverse Recovery Current
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 650V
Recovery Charge
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
= 650V
Forward Recovery Voltage
I
F
= 60A, di
F
/dt
= 480A/
μ
s, V
R
= 650V
Rate of Fall of Recovery Current
I
F
= 60A, di
F
/dt
= -480A/
μ
s, V
R
=650V
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT40GF120JRDQ2 功能描述:IGBT 1200V 77A 347W SOT227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT40GL120JU2 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227
APT40GL120JU3 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227
APT40GLQ120JCU2 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APT40GP60B 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 IGBT
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