- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36717 > APT5040KFLLG (MICROSEMI POWER PRODUCTS GROUP) 17 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | APT5040KFLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | APT5040KFLLG |
DYNAMIC CHARACTERISTICS
APT5040KFLL
050-7169
Rev
-
10-2003
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID 17A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID 17A, di/dt = 100A/s, V
R
= 333V)
Reverse Recovery Charge
(IS = -ID 17A, di/dt = 100A/s, V
R
= 333V)
Peak Recovery Current
(IS = -ID 17A, di/dt = 100A/s, V
R
= 333V)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
17
68
1.3
15
Tj = 25°C
212
280
Tj = 125°C
272
350
Tj = 25°C
853
1110
Tj = 125°C
1299
1690
Tj = 25°C
7.8
10
Tj = 125°C
912
Symbol
RθJC
RθJA
MIN
TYP
MAX
.50
TBD
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.94mH, RG = 25, Peak IL = 17A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
17A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 17A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 250V
I
D
= 17A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 333V, V
GS
= 15V
I
D
= 17A, R
G
= 5
INDUCTIVE SWITCHING @ 125°C
V
DD
= 333V V
GS
= 15V
I
D
= 17A, R
G
= 5
MIN
TYP
MAX
1006
234
16
26
8
14
9
4
18
2
73
26
198
47
UNIT
pF
nC
ns
J
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 9a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
相關PDF資料 |
PDF描述 |
|---|---|
| APT5050BNF-GULLWING | 14 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5050BNF-BUTT | 14 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BNF-GULLWING | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5040BNF-BUTT | 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT5050BNF | 14 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT5050AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-3 |
| APT5050BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247AD |
| APT5050BNF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247AD |
| APT5050BNFR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247AD |
| APT5050BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 16A I(D) | TO-247AD |
發(fā)布緊急采購，3分鐘左右您將得到回復。