參數(shù)資料
型號: APT5040KFLLG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 17 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 95K
代理商: APT5040KFLLG
APT5040KFLL
050-7169
Rev
-
10-2003
Typical Preformance Curves
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
Crss
Coss
Ciss
VDS=100V
10mS
1mS
100S
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100
500
0
10
20
30
40
50
0
5
10
15
20
25
30
35
40
0.3
0.5
0.7
0.9
1.1
1.3
1.5
68
10
5
1
.1
16
14
12
10
8
6
4
2
0
VDS=250V
VDS=400V
I
D
= 17A
TJ=+150°C
TJ=+25°C
4,000
1,000
100
10
100
50
10
5
1
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
V
DD
= 333V
R
G
= 5
T
J
= 125°C
L = 100H
0
5
10
15
20
0
5
10
15
20
0
4
8
12
16
20
0
5
10
152025
30
35 404550
V
DD
= 333V
I
D
= 17A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
30
25
20
15
10
5
0
250
200
150
100
50
0
50
40
30
20
10
0
300
250
200
150
100
50
0
相關(guān)PDF資料
PDF描述
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APT5040BNF-GULLWING 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT5040BNF-BUTT 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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