參數(shù)資料
型號(hào)： APT50GF120JRDQ3
廠商： Advanced Power Technology Ltd.
英文描述： FAST IGBT & FRED
中文描述： 快速IGBT
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 460K
代理商： APT50GF120JRDQ3
0
APT50GF120JRDQ3
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 75A
T
J
= 150°C, R
G
= 1.0
,
V
GE
=
15V, L = 100μH,V
CE
= 1200V
Inductive Switching (25°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 75A
R
G
= 1.0
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 75A
R
G
= 1.0
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
MIN
TYP
MAX
5320
555
300
10.0
495
50
290
225
36
70
355
65
7965
9895
4340
36
70
410
110
7890
14110
6040
UNIT
pF
V
nC
A
ns
μ
J
ns
μ
J
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
gm
Volts
MIN
TYP
MAX
.24
.56
29.2
2500
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
RMS Voltage
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Symbol
R
θ
JC
R
θ
JC
W
T
V
Isolation
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
E
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
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