參數(shù)資料
型號： APT50GF120JRDQ3
廠商： Advanced Power Technology Ltd.
英文描述： FAST IGBT & FRED
中文描述： 快速IGBT
文件頁數(shù)： 4/9頁
文件大?。?/td> 460K
代理商： APT50GF120JRDQ3
0
APT50GF120JRDQ3
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
=
800V
R
=
1.0
L = 100μH
E
O
,
t
r
R
t
d
,
FIGURE 15, Switching Energy Losses vs. Gate Resistance
E
O
,
t
f
F
t
d
(
,
FIGURE 16, Switching Energy Losses vs Junction Temperature
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
T
, JUNCTION TEMPERATURE (°C)
R
G
=
1.0
, L
=
100
μ
H, V
CE
=
800V
V
CE
= 800V
T
J
= 25°C
or 125°C
R
= 1.0
L = 100μH
10
30
V
GE
= 15V
T
J
=
25 or 125°C,V
GE
=
15V
50
70
90
110 130 150 170
10
30
50
70
90
110 130 150 170
10 30
50
70
90
110 130 150 170
10
30
50
70
90
110 130 150 170
10
30
50
70
90
110 130 150 170
10
30
50
70
90 110 130 150 170
0
5
10
15
20
0
25
50
75
100
125
R
G
=
1.0
, L
=
100
μ
H, V
CE
=
800V
45
40
35
30
25
20
15
10
5
0
250
200
150
100
50
0
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
500
400
300
200
100
0
140
120
100
80
60
40
20
0
14
12
10
8
6
4
2
0
50
40
30
20
10
0
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
T
J
=
125°C
T
J
=
25°C
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
T
J
=
125°C
T
J
=
25°C
E
on2,
150A
E
off,
150A
E
on2,
75A
E
off,
75A
E
on2,
37.5A
E
off,
37.5A
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
V
CE
= 800V
V
GE
= +15V
R
G
= 1.0
E
on2,
150A
E
off,
150A
E
on2,
75A
E
off,
75A
E
on2,
37.5A
E
off,
37.5A
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