參數(shù)資料
型號(hào)： APT50GN120B2
廠商： Advanced Power Technology Ltd.
英文描述： IGBT
中文描述： IGBT的
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 200K
代理商： APT50GN120B2
0
APT50GN120B2(G)
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
SCSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 50A
T
J
= 150°C, R
G
= 2.2
7
,
V
GE
=
15V, L = 100μH,V
CE
= 1200V
V
CC
= 960V, V
GE
= 15V,
T
J
= 125°C, R
G
= 2.2
7
Inductive Switching (25°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 50A
R
G
= 2.2
7
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 800V
V
GE
= 15V
I
C
= 50A
R
G
= 2.2
7
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
6
MIN
TYP
MAX
3600
210
170
9.5
315
20
190
150
10
28
27
320
115
TBD
3900
4495
28
27
395
205
TBD
5660
6795
UNIT
pF
V
nC
A
μ
s
ns
μ
J
ns
μ
J
UNIT
°C/W
gm
MIN
TYP
MAX
.23
N/A
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
R
θ
JC
R
θ
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5
E
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
Gint
nor gate driver impedance.
8 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
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參數(shù)描述
APT50GN120B2G 功能描述:IGBT 1200V 134A 543W TO-247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開(kāi)）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
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APT50GN60BDQ2 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:IGBT
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