參數(shù)資料
型號(hào)： APT50GN120B2
廠商： Advanced Power Technology Ltd.
英文描述： IGBT
中文描述： IGBT的
文件頁(yè)數(shù)： 4/6頁(yè)
文件大小： 200K
代理商： APT50GN120B2
0
APT50GN120B2(G)
V
GE
=15V,T
J
=25°C
V
CE
=
800V
R
=
2.2
L = 100 μH
E
O
,
t
r
R
t
d
,
FIGURE 15, Switching Energy Losses vs. Gate Resistance
E
O
,
t
f
F
t
d
(
,
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
T
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 800V
V
GE
= +15V
R
G
= 2.2
R
G
=
2.2
, L
=
100
μ
H, V
CE
=
800V
V
CE
= 800V
T
J
= 25°C
,
T
J
=125°C
R
= 2.2
L = 100 μH
20 30 40 50 60
35
30
25
20
15
10
5
0
120
100
80
60
40
20
0
25000
20000
15000
10000
5000
0
50000
40000
30000
20000
10000
0
V
GE
= 15V
V
GE
=15V,T
J
=125°C
V
CE
= 800V
V
GE
= +15V
R
G
= 2.2
V
CE
= 800V
V
GE
= +15V
R
G
= 2.2
E
on2,
100A
E
off,
100A
E
off,
50A
E
on2,
50A
E
on2,
25A
100
E
off,
25A
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
40
V
CE
= 800V
V
GE
= +15V
T
J
= 125°C
R
G
=
2.2
, L
=
100
μ
H, V
CE
=
800V
500
400
300
200
100
0
300
250
200
150
100
50
0
14000
12000
10000
8000
6000
4000
2000
0
22000
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
T
J
=
25°C,V
GE
=
15V
T
J
=
125°C,V
GE
=
15V
70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
20 30
40 50 60 70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
0
10
20
30
50
0
25
50
75
125
T
J
=
25 or 125°C,V
GE
=
15V
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
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