參數(shù)資料
型號： APT50GN60B
廠商： Advanced Power Technology Ltd.
英文描述： IGBT
中文描述： IGBT的
文件頁數(shù)： 4/6頁
文件大?。?/td> 302K
代理商： APT50GN60B
0
APT50GN60B(G)
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
=
400V
R
=
4.3
L = 100 μH
E
O
,
t
r
R
t
d
,
FIGURE 15, Switching Energy Losses vs. Gate Resistance
E
O
,
t
f
F
t
d
(
,
FIGURE 16, Switching Energy Losses vs Junction Temperature
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
T
, JUNCTION TEMPERATURE (°C)
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
0
10
20
30
40
50
0
25
50
75
100
125
25
20
15
10
5
0
120
100
80
60
40
20
0
6000
5000
4000
3000
2000
1000
0
16000
14000
12000
10000
8000
6000
4000
2000
0
350
300
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
T
J
=
125°C
T
J
=
25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
T
J
=
125°C
T
J
=
25°C
V
CE
= 400V
T
J
= 25°C
,
125°C
R
= 4.3
L = 100 μH
V
GE
= 15V
R
G
=
4.3
, L
=
100
μ
H, V
CE
=
400V
T
J
=
25 or 125°C,V
GE
=
15V
R
G
=
4.3
, L
=
100
μ
H, V
CE
=
400V
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
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