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參數(shù)資料
| 型號： | APT50GP60B |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 91K |
| 代理商： | APT50GP60B |
0
APT50GP60B
600V
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
Low Gate Charge
Ultrafast Tail Current shutoff
200 kHz operation @ 400V, 26A
100 kHz operation @ 400V, 41A
SSOA rated
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
APT50GP60B
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Symbol
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
500
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500μA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
μA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
600
±20
±30
100
72
190
190A@600V
625
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
7
@ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 25°C
Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
POWER MOS 7
IGBT
G
C
E
TO-247
GCE
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GP60B2DF2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60B2DQ2 | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60B2DQ2G | 功能描述:IGBT 600V 150A 625W TMAX RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT50GP60BG | 功能描述:IGBT 600V 100A 625W TO247 RoHS:是 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT50GP60J | 功能描述:IGBT 600V 100A 329W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:POWER MOS 7® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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