參數(shù)資料
型號(hào): APT50GP60B2DQ2
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi): IGBT 晶體管
英文描述: 150 A, 600 V, N-CHANNEL IGBT
封裝: TMAX-3
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 0K
代理商: APT50GP60B2DQ2
050-7495
Rev
A
11-2005
APT50GP60B2DQ2(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 4.3
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE = 400V
T
J = 25°C or 125°C
R
G = 4.3
L = 100H
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
GE = 15V
20 30 40 50 60 70 80 90 100 110
20 30 40 50 60 70
80 90 100 110
20 30 40 50 60 70 80 90 100 110
20 30 40
50 60
70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 4.3, L = 100H, VCE = 400V
T
J = 25 or 125°C,VGE = 15V
25
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
R
G = 4.3, L = 100H, VCE = 400V
VCE = 400V
VGE = +15V
RG = 4.3
T
J = 125°C
T
J = 25°C
VCE = 400V
VGE = +15V
RG = 4.3
T
J = 125°C
T
J = 25°C
E
on2,100A
E
off,100A
VCE = 400V
VGE = +15V
TJ = 125°C
E
on2,25A
E
off,25A
E
on2,50A
E
off,50A
E
on2,100A
E
off,100A
E
on2,25A
E
off,25A
E
on2,50A
E
off,50A
VCE = 400V
VGE = +15V
RG = 4.3
相關(guān)PDF資料
PDF描述
APT50GP60B 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GP60BG 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GP60S 100 A, 600 V, N-CHANNEL IGBT
APT50GP60SG 100 A, 600 V, N-CHANNEL IGBT
APT50GP60B 100 A, 600 V, N-CHANNEL IGBT, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50GP60B2DQ2G 功能描述:IGBT 600V 150A 625W TMAX RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開(kāi)):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT50GP60BG 功能描述:IGBT 600V 100A 625W TO247 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類(lèi)型:PT 電壓 - 集電極發(fā)射極擊穿(最大):1200V Vge, Ic時(shí)的最大Vce(開(kāi)):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類(lèi)型:標(biāo)準(zhǔn) 安裝類(lèi)型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT50GP60J 功能描述:IGBT 600V 100A 329W SOT227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT50GP60JDQ2 功能描述:IGBT 600V 100A 329W SOT227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時(shí)的最大Vce(開(kāi)):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT50GP60LDL 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Resonant Mode Combi IGBT