- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36718 > APT50GP60J 100 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號(hào)： | APT50GP60J |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 98K |
| 代理商： | APT50GP60J |
050-7435
Rev
A
4-2003
APT50GP60J
T
J
= 125°C, VGE = 10V or 15V
T
J
= 25°C, VGE = 10V or 15V
VCE = 400V
RG = 5
L = 100 H
V
GE =
15V,TJ=125°C
VGE= 15V
VGE= 10V
V
GE
=10V,TJ=125°C
V
GE =
10V,TJ=25°C
V
GE =
15V,TJ=25°C
T
J
= 25°C, VGE = 10V or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=5
, L = 100H, V
CE = 400V
R
G
=5
, L = 100H, V
CE = 400V
VCE = 400V
L = 100 H
RG = 5
T
J
= 25 or 125°C,VGE = 15V
T
J
= 25 or 125°C,VGE = 10V
VCE = 400V
VGE = +15V
RG = 5
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
VCE = 400V
VGE = +15V
T
J = 125°C
VCE = 400V
L = 100 H
RG = 5
TJ =125°C, VGE=15V
T
J
= 125°C, VGE = 10V or 15V
TJ =125°C,VGE=10V
TJ = 25°C, VGE=10V
TJ = 25°C, VGE=15V
20
30
40
50
60
70
80
90
100
20
30
40
50
60
70
80
90
100
20
30
40
50
60
70
80
90
100
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90 100
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
-50
-25
0
25
50
75
100
125
40
35
30
25
20
15
10
05
0
100
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
Eoff 100A
Eon2 100A
Eon2 25A
Eoff 50A
Eon2 50A
Eoff 25A
Eon2 25A
Eoff 50A
Eon2 50A
Eon2 100A
Eoff 100A
Eoff 25A
VCE = 400V
TJ = 25°C or 125°C
RG = 5
L = 100 H
TYPICAL PERFORMANCE CURVES
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50GP60J | 100 A, 600 V, N-CHANNEL IGBT |
| APT50GP60LDL | 150 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT50GS60BR(G) | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GS60SR(G) | 93 A, 600 V, N-CHANNEL IGBT |
| APT50GS60BRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GP60JDQ2 | 功能描述:IGBT 600V 100A 329W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT50GP60LDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。