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參數(shù)資料
| 型號： | APT50GP60LDL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 174K |
| 代理商： | APT50GP60LDL |
052-6354
Re
v
A
7-2008
APT50GP60LDL(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Ratings
600
±30
150
72
190
190A @ 600V
625
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
7 @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
525
2750
±100
The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high
frequency, high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
APT50GP60LDL(G)
600V, 50A, VCE(ON) = 2.2V Typical
Resonant Mode Combi IGBT
C
E
G
Features
Low Conduction Loss
Low Gate Charge
Ultrafast Tail Current shutoff
Low forward Diode Voltage (V
F)
Ultrasoft Recovery Diode
SSOA Rated
RoHS Compliant
Typical Applications
Induction Heating
Welding
Medical
High Power Telecom
Resonant Mode Phase Shifted
Bridge
Microsemi Website - http://www.microsemi.com
G
C
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50GS60BR(G) | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GS60SR(G) | 93 A, 600 V, N-CHANNEL IGBT |
| APT50GS60BRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GS60SRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT |
| APT50GT120B2R | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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