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參數(shù)資料
| 型號： | APT50GP60LDL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 174K |
| 代理商： | APT50GP60LDL |
052-6354
Re
v
A
7-2008
APT50GP60LDL(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 124°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 50A
Forward Voltage
I
F
= 100A
I
F
= 50A, T
J
= 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
1.25
1.6
2.0
1.25
APT50GP60LDL(G)
50
150
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
52
-
399
-
1498
-
9
-
649
-
3734
-
13
-
284
-
5134
-
34
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 50A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 25°C
I
F
= 50A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 125°C
I
F
= 50A, di
F
/dt = -1000A/s
V
R
= 400V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/s, V
R
= 30V, T
J
= 25°C
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
0.316
0.312
0.00467
0.1483
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| APT50GS60SR(G) | 93 A, 600 V, N-CHANNEL IGBT |
| APT50GS60BRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GS60SRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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