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參數(shù)資料
| 型號： | APT50GP60S |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | APT50GP60S |
0
APT50GP60B_S
TYPICAL PERFORMANCE CURVES
70
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
100
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
T
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
T
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
B
C
,
V
C
,
I
C
,
I
C
,
V
I
C
D
V
C
,
V
G
,
I
C
,
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160 180
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
150
250μsTJ = 25°C.
<0.5 % DUTY CYCLE
I
C
=100A
T
C
=-55°C
T
C
=125°C
T
C
=25°C
V
CE
=480V
V
CE
=300V
V
CE
=120V
250 VGE = 10V.
<0.5 % DUTY CYCLE
60
250 VGE = 15V.
<0.5 % DUTY CYCLE
60
250 VGE = 15V.
<0.5 % DUTY CYCLE
0
I
C
= 50A
T
J
= 25°C
TJ = 25°C
TJ = -55°C
TJ = 125°C
T
C
=-55°C
T
C
=25°C
T
C
=125°C
<0.5 % DUTY CYCLE
I
C
= 25A
I
C
= 50A
I
C
=100A
I
C
= 25A
50
40
30
20
10
0
80
60
40
20
0
3.5
3
2.5
2
1.5
1
0.5
0
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
70
50
40
30
20
10
0
14
12
10
8
6
4
2
0
3
2.5
2
1.5
1
0.5
200
180
160
140
120
100
80
60
40
20
0
I
C
= 50A
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