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參數資料
| 型號： | APT50GP60S |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 108K |
| 代理商： | APT50GP60S |
0
APT50GP60B_S
TYPICAL PERFORMANCE CURVES
40
T
J
=
125°C, V
GE
=
10V
or 15V
T
J
=
25°C, V
GE
=
10V
or 15V
V
CE
= 400V
R
= 5
L = 100 μH
V
GE
=
15V,T
J
=125°C
V
GE
= 15V
V
GE
= 10V
V
GE
=10V,T
J
=125°C
V
GE
=
10V,T
J
=25°C
V
GE
=
15V,T
J
=25°C
T
J
=
25°C, V
GE
=
10V
or 15V
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
100
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
T
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=
5
, L
=
100
μ
H, V
CE
=
400V
50
60
70
R
G
=
5
, L
=
100
μ
H, V
CE
=
400V
V
= 400V
L = 100 μH
R
G
= 5
T
J
=
25 or 125°C,V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
10V
V
CE
= 400V
V
GE
= +15V
R
G
= 5
S
E
O
,
t
r
R
t
d
,
E
O
,
t
f
F
t
d
(
,
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
V
= 400V
L = 100 μH
R
G
= 5
T
J
=125°C, V
GE
=15V
T
J
=
125°C, V
GE
=
10V
or 15V
T
J
=125°C,V
GE
=10V
T
J
= 25°C, V
GE
=10V
T
J
= 25°C, V
GE
=15V
20
30
40
50
60
70
80
90
100
20
30
40
50
60
70
80
90
100
20
30
40
80
90
100
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90
100
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
-50
-25
0
25
50
75
100
125
35
30
25
20
15
10
05
0
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
140
120
100
80
60
40
20
0
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
E
off
100A
E
on2
100A
E
on2
25A
E
off
50A
E
on2
50A
E
off
25A
E
on2
25A
E
off
50A
E
on2
50A
E
on2
100A
E
off
100A
E
off
25A
V
CE
= 400V
T
J
= 25°C or 125°C
R
= 5
L = 100 μH
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120L | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GS60BR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
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