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參數(shù)資料
| 型號(hào)： | APT50GP60SG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大小： | 98K |
| 代理商： | APT50GP60SG |
050-7434
Rev
B
2-2004
APT50GP60B_S
TYPICAL PERFORMANCE CURVES
10 20
30
40
50
60
70
80
90
100
210
100
50
10
0.20
0.16
0.12
0.08
0.04
0
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
10,000
5,000
1,000
500
100
50
10
200
180
160
140
120
100
180
160
140
120
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
F
MAX
,OPERATING
FREQUENCY
(kHz)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5
Cies
Coes
max
max1
max 2
max1
d (on )
r
d(off )
f
diss
cond
max 2
on 2
off
JC
diss
JC
Fmin(f
, f
)
0.05
f
tt
t
PP
f
EE
TT
P
R θ
=
++
+
=
+
=
Cres
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.0090806
0.0192963
0.0658343
0.0046253
0.0021766
0.0142175
Power
(Watts)
Junction
temp. ( ”C)
Case temperature
RC MODEL
0.1055619
0.345873
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