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參數(shù)資料
| 型號： | APT50GT120B2R |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 94 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 196K |
| 代理商： | APT50GT120B2R |
052-6270
Rev
D
9-2008
Dynamic Characteristics
APT50GT120B2R_LR(G)
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
C
ies
Input Capacitance
V
GE = 0V, VCE = 25V
f = 1MHz
-
3300
-
pF
C
oes
Output Capacitance
-
500
-
C
res
Reverse Transfer Capacitance
-
220
-
V
GEP
Gate-to-Emitter Plateau Voltage
Gate Charge
V
GE = 15V
V
CE= 600V
I
C = 50A
-
10.5
-
V
Q
g
Total Gate Charge
-
340
-
nC
Q
ge
Gate-Emitter Charge
-40
-
Q
gc
Gate-Collector Charge
-
210
-
SSOA
Switching Safe Operating Area
T
J = 150°C, RG = 1.0Ω
7, V
GE = 15V,
L = 100μH, V
CE= 1200V
150
A
t
d(on)
Turn-On Delay Time
Inductive Switching (25°C)
V
CC = 800V
V
GE = 15V
I
C = 50A
R
G = 4.7Ω
T
J = +25°C
-24
-
ns
t
r
Current Rise Time
-53
-
t
d(off)
Turn-Off Delay Time
-
230
-
t
f
Current Fall Time
-26
-
E
on1
Turn-On Switching Energy 4
-
TBD
-
μJ
E
on2
Turn-On Switching Energy 5
-
5330
-
E
off
Turn-Off Switching Energy 6
-
2330
-
t
d(on)
Turn-On Delay Time
Inductive Switching (125°C)
V
CC = 800V
V
GE = 15V
I
C = 50A
R
G = 4.7Ω
T
J = 125°C
-24
-
ns
t
r
Current Rise Time
-53
-
t
d(off)
Turn-Off Delay Time
-
255
-
t
f
Current Fall Time
-48
-
E
on1
Turn-On Switching Energy 4
-
TBD
-
μJ
E
on2
Turn-On Switching Energy 5
-
5670
-
E
off
Turn-Off Switching Energy 6
-
2850
-
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
R
θJC
Junction to Case
-
0.20
°C/W
W
T
Package Weight
-
5.9
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance not including gate driver impedance.
Thermal and Mechanical Characteristics
Microsemi reserves the right to change, without notice, the specications and information contained herein.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GT120B2RDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode IGBT |
| APT50GT120B2RDLG | 功能描述:IGBT 1200V 106A 694W TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GT120B2RDQ2G | 功能描述:IGBT 1200V 94A 625W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GT120B2RG | 功能描述:IGBT 1200V 94A 625W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GT120JRDQ2 | 功能描述:IGBT 1200V 72A 379W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:Thunderbolt IGBT® 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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