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參數(shù)資料
| 型號(hào)： | APT50GT60BR |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 220K |
| 代理商： | APT50GT60BR |
052-6273
Re
v
C
6-2008
APT50GT60BR_SR(G)
TYPICAL PERFORMANCE CURVES
The Thunderblot IGBT is a new generation of high voltage power IGBTs.Using Non- Punch
Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast
switching speed.
LowForwardVoltageDrop
HighFreq.Switchingto100KHz
LowTailCurrent
UltraLowLeakageCurrent
RBSOAandSCSOARated
Thunderbolt IGBT
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
STATICELECTRICALCHARACTERISTICS
Characteristic/TestConditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 2mA)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT50GT60BR_SR(G)
600
±30
110
52
150
150A @ 600V
446
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3
4
5
1.7
2.0
2.5
2.2
25
TBD
120
G
C
E
TO
-247
G
C
E
D3PAK
G
C
E
(S)
(B)
600V
APT50GT60BR
APT50GT60SR
APT50GT60BRG* APT50GT60SRG*
*GDenotesRoHSCompliant,PbFreeTerminalFinish.
MicrosemiWebsite-http://www.microsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT50GT60BRDQ1 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDQ1G | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDQ2 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Thunderbolt IGBT |
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