- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36718 > APT50GT60BR (MICROSEMI POWER PRODUCTS GROUP) 110 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF資料下載
參數(shù)資料
| 型號(hào)： | APT50GT60BR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 220K |
| 代理商： | APT50GT60BR |
052-6273
Re
v
C
6-2008
APT50GT60BR_SR(G)
TYPICAL PERFORMANCE CURVES
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θJC
,THERMAL
IMPED
ANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure19a,MaximumEffectiveTransientThermalImpedance,Junction-To-CasevsPulseDuration
10-5
10-4
10-3
10-2
10-1
1.0
4,000
1,000
500
100
160
140
120
100
80
60
40
20
0
C
,CAP
A
CIT
ANCE
(
P
F)
I C
,COLLECT
OR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure17,CapacitancevsCollector-To-EmitterVoltage
Figure18,MinimimSwitchingSafeOperatingArea
0
10
20
30
40
50
0
100
200
300
400
500
600
700
FIGURE19b,TRANSIENTTHERMALIMPEDANCEMODEL
10 20
30
40
50
60
70
80
90 100
F
MAX
,OPERA
TING
FREQ
UENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure20,OperatingFrequencyvsCollectorCurrent
120
50
10
2
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 400V
R
G = 4.3
0.114
0.113
0.0057
0.0276
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EX
T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50GT60SR | 110 A, 600 V, N-CHANNEL IGBT |
| APT50M38JFLL | 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M38JFLL | 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M50JFLL | 71 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M50JFLL | 71 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
| APT50GT60BRDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDQ1G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。