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參數(shù)資料
| 型號： | APT6015JFVR |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 60K |
| 代理商： | APT6015JFVR |
DYNAMIC CHARACTERISTICS
APT6015JFVR
050-7264
Rev
A
8-2003
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 4.08mH, RG = 25, Peak IL = 35A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -35A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -35A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -35A, di/dt = 100A/s)
Peak Recovery Current
(IS = -35A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 35A @ 25°C
VGS = 15V
VDD = 300V
ID = 35A @ 25°C
RG = 1.6
MIN
TYP
MAX
7500
9000
900
1260
320
480
315
475
45
70
125
190
15
30
13
26
45
70
510
UNIT
pF
nC
ns
MIN
TYP
MAX
35
140
1.3
15
Tj = 25°C
250
Tj = 125°C
500
Tj = 25°C
1.6
Tj = 125°C
5.5
Tj = 25°C
15
Tj = 125°C
27
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.28
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| APT6015JN | 制造商:APT 功能描述:MOSFET Power Module Transistor, Independent 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 38A |
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| APT6015JVR | 功能描述:MOSFET N-CH 600V 35A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT6015LVFR | 制造商:Microsemi Corporation 功能描述:MOSFET Transistor, N-Channel, TO-264 |
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