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參數(shù)資料
| 型號(hào)： | APT6030SVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | APT6030SVR |
0
Typical Performance Curves
40
APT6030BVR_SVR
0
50
100
150
200
250
300
0
4
8
12
16
20
0
2
4
6
8
0
8
16
24
32
40
25
50
T
, CASE TEMPERATURE (°C)
75
100
125
150
-50
-25
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
0
25
50
75
100
125 150
-50
-25
T
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
40
32
24
16
8
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
32
24
16
8
0
40
32
24
16
8
0
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
VD250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
5V
VGS=5.5V, 6V, 10V & 15V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=6V, 10V & 15V
4V
4.5V
5V
5.5V
4V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
T
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
D
(
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6030BVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6032AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6030SVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT6032AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6033BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6033BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD |
| APT6035 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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