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參數(shù)資料
| 型號(hào)： | APT6030SVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| 中文描述： | 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | APT6030SVR |
APT6030BVR_SVR
0
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO
-
247 Package Outline (BVR)
D
3
PAK Package Outline (SVR)
15.95 (.628)
1.22 (.048)
5.45 (.215) BSC
4.98 (.196)
1.47 (.058)
2.67 (.105)
0.46 (.018)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
(Base of Lead)
D
(
1.98 (.078)
Gate
Drain
Source
1.27 (.050)
11.51 (.453)
13.41 (.528)
1.04 (.041)
13.79 (.543)
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
3.50 (.138)
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
D
Drain
Source
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1
5
10
50
100
600
.01
.1
1
10
50
0
50
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TC =+25°C
TJ =+150°C
SINGLE PULSE
100
50
10
5
1
0.5
0.1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY R
DS
(ON)
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=120V
VDS=480V
I
D
= I
D
[Cont.]
10μS
1mS
10mS
100mS
DC
100μS
VDS=300V
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
G
,
I
D
,
I
D
,
C
15,000
10,000
5,000
1,000
500
100
100
50
10
5
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT6030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6030BVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6030BVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6032AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT6030SVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT6032AVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6033BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6033BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 23A I(D) | TO-247AD |
| APT6035 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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