參數(shù)資料
型號: APT8015JVFR
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 44 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數(shù): 2/4頁
文件大?。?/td> 74K
代理商: APT8015JVFR
APT8015JVFR
050-5600
Rev
A
8-2007
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/s)
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/s)
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6
MIN
TYP
MAX
14715
17650
1470
2050
794
1190
690
1035
75
110
275
410
22
44
20
40
97
145
15
30
UNIT
pF
nC
ns
MIN
TYP
MAX
44
176
1.3
18
Tj = 25°C
300
Tj = 125°C
600
Tj = 25°C
2.5
Tj = 125°C
17.7
Tj = 25°C
16.1
Tj = 125°C
36.2
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 3.72mH, RG = 25, Peak IL = 44A
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
5 IS ≤ -ID [Cont.], di/dt = 100A/s, VDD - VDSS, Tj - 150°C, RG = 2.0,
VR = 200V
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL / PACKAGE CHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.18
40
2500
13
UNIT
°C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
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