- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄51269 > APT8015JVFR (MICROSEMI POWER PRODUCTS GROUP) 44 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT8015JVFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 44 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 74K |
| 代理商： | APT8015JVFR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
100
200
300
400
0
3
6
9
12
15
0
2468
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT8015JVFR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
100
80
60
40
20
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100
80
60
40
20
0
100
80
60
40
20
0
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
050-5600
Rev
A
8-2007
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=6.5V, 7V, 10V & 15V
5V
4.5V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=6.5V,7V,10V & 15V
5.5V
6V
5V
4.5V
5.5V
6V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT8015JVFR | 44 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8018L2VFRG | 43 A, 800 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8018L2VFR | 43 A, 800 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8018L2VFR | 43 A, 800 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8020JLL | 33 A, 800 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT8015JVFR_05 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8015JVR | 功能描述:MOSFET N-CH 800V 44A SOT-227 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT8016DFN | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 800V V(BR)DSS | 47A I(D) |
| APT8016DN | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | CHIP |
| APT8018 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。