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參數(shù)資料
| 型號(hào)： | APT8024B2VFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 33 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 141K |
| 代理商： | APT8024B2VFR |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=20A
-
4
mΩ
VGS=4.5V, ID=16A
-
5
m
VGS=2.5V, ID=12A
8
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.3
-
1.2
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=24V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±30
uA
Qg
Total Gate Charge
2
ID=20A
-
63
100
nC
Qgs
Gate-Source Charge
VDS=25V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
26
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
13
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
100
-
ns
tf
Fall Time
RD=15Ω
-45
-
ns
Ciss
Input Capacitance
VGS=0V
-
4600 7360
pF
Coss
Output Capacitance
VDS=25V
-
745
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
750
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
1.5
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=2A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=20A, VGS=0V,
-
46
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
54
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4430GEM
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT8024B2VFR_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8024B2VFRG | 功能描述:MOSFET N-CH 800V 33A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT8024B2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8024B2VR_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8024B2VRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
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