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參數(shù)資料
| 型號： | APTC90AM60SCTG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 59 A, 900 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP4, 10 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 209K |
| 代理商： | APTC90AM60SCTG |
APTC90AM60SCTG
APT
C
90AM
60SCT
G
–
Rev
0
Au
gust,
2009
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 900V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 900V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 52A
50
60
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 6mA
2.5
3
3.5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
200
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
13.6
Coss
Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz
0.66
nF
Qg
Total gate Charge
540
Qgs
Gate – Source Charge
64
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 52A
230
nC
Td(on)
Turn-on Delay Time
70
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
400
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 52A
RG = 3.8Ω
25
ns
Eon
Turn-on Switching Energy
1.8
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
1.5
mJ
Eon
Turn-on Switching Energy
2.52
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
1.7
mJ
Series diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
600
A
IF
DC Forward Current
Tc = 85°C
60
A
IF = 60A
1.1
1.15
IF = 120A
1.4
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
Tj = 125°C
48
ns
Tj = 25°C
66
Qrr
Reverse Recovery Charge
IF = 60A
VR = 133V
di/dt = 400A/s
Tj = 125°C
300
nC
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