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參數(shù)資料
| 型號(hào)： | APTC90AM60T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 59 A, 900 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 200K |
| 代理商： | APTC90AM60T1G |
APTC90AM60T1G
APT
C
90AM
60T
1G
–
Rev
0
August,
2009
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 900V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 900V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 52A
50
60
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 6mA
2.5
3
3.5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
200
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
13.6
Coss
Output Capacitance
VGS = 0V ; VDS = 100V
f = 1MHz
0.66
nF
Qg
Total gate Charge
540
Qgs
Gate – Source Charge
64
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 52A
230
nC
Td(on)
Turn-on Delay Time
70
Tr
Rise Time
20
Td(off)
Turn-off Delay Time
400
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 52A
RG = 3.8Ω
25
ns
Eon
Turn-on Switching Energy
3
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
1.5
mJ
Eon
Turn-on Switching Energy
4.2
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8Ω
1.7
mJ
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
59
IS
Continuous Source current
(Body diode)
Tc = 80°C
44
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 52A
0.8
1.2
V
trr
Reverse Recovery Time
Tj = 25°C
920
ns
Qrr
Reverse Recovery Charge
IS = - 52A
VR = 400V
diS/dt = 200A/s
Tj = 25°C
60
C
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case Thermal Resistance
0.27
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
80
g
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