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參數(shù)資料
| 型號： | APTGF50VDA60T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 65 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 223K |
| 代理商： | APTGF50VDA60T3G |
APTGF50VDA60T3G
APTGF50VDA60
T
3G
–
Rev
1
S
eptem
ber,
2009
www.microsemi.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
500
A
Tj = 25°C
1.7
2.0
2.45
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
2200
Coes
Output Capacitance
323
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
200
pF
Qg
Total gate Charge
166
Qge
Gate – Emitter Charge
20
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC = 50A
100
nC
Td(on)
Turn-on Delay Time
40
Tr
Rise Time
9
Td(off)
Turn-off Delay Time
120
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
12
ns
Td(on)
Turn-on Delay Time
42
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
130
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
21
ns
Eon
Turn-on Switching Energy
Tj = 125°C
0.5
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
Tj = 125°C
1
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 10s ; Tj = 125°C
225
A
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 70°C
60
A
IF = 60A
1.6
1.8
IF = 120A
1.9
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.4
V
Tj = 25°C
130
trr
Reverse Recovery Time
Tj = 125°C
170
ns
Tj = 25°C
220
Qrr
Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =200A/s
Tj = 125°C
920
nC
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