參數(shù)資料
型號: APTGV50H60T3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 80 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP3, 25 PIN
文件頁數(shù): 2/9頁
文件大?。?/td> 369K
代理商: APTGV50H60T3G
APTGV50H60T3G
A
P
TG
V
50H
60T3G
–Re
v
0
J
une
,20
07
www.microsemi.com
2-9
All ratings @ Tj = 25°C unless otherwise specified
1. Top switches
1.1 Top Trench + Field Stop IGBT characteristics
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
80
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
100
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
176
W
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C
100A @ 550V
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
A
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 50A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 600A
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3150
Coes
Output Capacitance
200
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
95
pF
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
40
ns
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
60
ns
Tj = 25°C
0.3
Eon
Turn-on Switching Energy
Tj = 150°C
0.43
mJ
Tj = 25°C
1.35
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
Tj = 150°C
1.75
mJ
RthJC
Junction to Case Thermal resistance
0.85
°C/W
相關(guān)PDF資料
PDF描述
APTM100A13S 65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100A13S 65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100A18FTG 43 A, 1000 V, 0.216 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100A46FT1G 19 A, 1000 V, 0.552 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM100H80FT1G 11 A, 1000 V, 0.96 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGV75H60T3G 功能描述:IGBT NPT BST CHOP FULL BRDG SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTH003A0X_10 制造商:LINEAGEPOWER 制造商全稱:LINEAGEPOWER 功能描述:Pico TLynxTM 3A: Non-Isolated DC-DC Power Modules
APTH003A0X4-SRZ 功能描述:DC/DC轉(zhuǎn)換器 2.4-5.5Vin 3A 0.6-3.63Vout RoHS:否 制造商:Murata 產(chǎn)品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓(標稱): 輸出端數(shù)量:1 輸出電壓(通道 1):3.3 V 輸出電流(通道 1):600 mA 輸出電壓(通道 2): 輸出電流(通道 2): 安裝風格:SMD/SMT 封裝 / 箱體尺寸:
APTH003A0X-SR 功能描述:DC/DC轉(zhuǎn)換器 SMT 3A, IN 2.4-5.5V OUT 0.6-3.63V RoHS:否 制造商:Murata 產(chǎn)品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓(標稱): 輸出端數(shù)量:1 輸出電壓(通道 1):3.3 V 輸出電流(通道 1):600 mA 輸出電壓(通道 2): 輸出電流(通道 2): 安裝風格:SMD/SMT 封裝 / 箱體尺寸:
APTH003A0X-SRZ 功能描述:DC/DC轉(zhuǎn)換器 SMT in 2.4-5.5Vdc out 0.59-3.63Vdc 3A RoHS:否 制造商:Murata 產(chǎn)品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓(標稱): 輸出端數(shù)量:1 輸出電壓(通道 1):3.3 V 輸出電流(通道 1):600 mA 輸出電壓(通道 2): 輸出電流(通道 2): 安裝風格:SMD/SMT 封裝 / 箱體尺寸: