參數(shù)資料
型號: APTGV50H60T3G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 80 A, 600 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP3, 25 PIN
文件頁數(shù): 6/9頁
文件大?。?/td> 369K
代理商: APTGV50H60T3G
APTGV50H60T3G
A
P
TG
V
50H
60T3G
–Re
v
0
J
une
,20
07
www.microsemi.com
6-9
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=150°C
0
20
40
60
80
100
5
6
7
8
9
101112
VGE (V)
I C
(A
)
Energy losses vs Collector Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
020
40
60
80
100
IC (A)
E
(
m
J)
VCE = 300V
VGE = 15V
RG = 8.2
TJ = 150°C
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
5
15
253545
55
65
Gate Resistance (ohms)
E
(
m
J)
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
25
50
75
100
125
0
100 200 300 400 500 600 700
VCE (V)
I C
(A)
VGE=15V
TJ=150°C
RG=8.2
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
The
rma
lIm
p
e
da
nc
e
(
°C
/W
)
6.2 Top Fast diode typical performance curves
TJ=-55°C
T
J=25°C
TJ=125°C
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
F, Anode to Cathode Voltage (V)
I F
,For
w
ar
d
C
u
rr
en
t
(A
)
Forw ard Current vs Forw ard Voltage
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
rm
al
Im
pe
da
nc
e
C
/W
)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
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