- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57951 > APTM100A13S 65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APTM100A13S |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 289K |
| 代理商： | APTM100A13S |
APTM100A13S
A
P
T
M
100A
13S
–
R
ev
2
S
ept
em
be
r,
2005
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
nc
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
30
60
90
120
150
180
0
4
8
1216
202428
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
en
t
(A
)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
60
120
180
240
300
360
01
23
45
67
89 10
VGS, Gate to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
30
60
90
120
150
180
ID, Drain Current (A)
R
DS
(o
n
)D
rai
n
to
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 32.5A
0
10
20
30
40
50
60
70
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTM100A13S | 65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A18FTG | 43 A, 1000 V, 0.216 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100A46FT1G | 19 A, 1000 V, 0.552 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100H80FT1G | 11 A, 1000 V, 0.96 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM100SK40T1G | 20 A, 1000 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM100A13SCG | 功能描述:PWR MODULE MOSFET 1000V 65A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100A13SG | 功能描述:PWR MODULE MOSFET 1000V 65A SP6 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100A18FTG | 功能描述:MOSFET 2 N CH 1000V 43A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100A23SCTG | 功能描述:MOSFET PHASE LEG SER/SIC DIO SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTM100A23STG | 功能描述:MOSFET PHASE LEG SER/PAR DIO SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。